| 摘要 |
<p>PURPOSE:To simulate with improved accuracy with regard to the characteristic of a ferroelectric memory. CONSTITUTION:By preparing the input data such as the initial condition, a reading pulse and respective parameters by means of a preparing part 1 for simulation input data, an anlysing part 2 receives the input data, applies an external electric field on the respective positive and negative residual polarizations using the lattice model of a ferroelectric substance, calculates the current difference or difference in the charge amount after calculating each current response and discriminates the state of memory '1' or '0'. A displaying part 3 of the simulated result displays the analysed result by the analysing part 2.</p> |
