| 摘要 |
<p>PURPOSE:To provide the semiconductor element capable of forming a thin-film silicon circuit having the electrical characteristics and fine structure equal to or better than the electrical characteristics and fine structure of a silicon circuit formed by using a single crystal silicon wafer. CONSTITUTION:This semiconductor thin-film element has the structure formed by successively forming a thermal silicon oxide film 1, a single crystal silicon thin film 2 clamped by the silicon oxide or silicon nitride film, an element smoothing layer 4, a fluorine-contained epoxy resin adhesive layer and a carrier substrate 6. Then, the structure which is as fine in submicron as the structure of a bulk silicon single crystal is provided in the single crystal silicon thin film 2 and since a glass substrate and silicon single crystal substrate are usable as a carrier substrate 6, the semiconductor thin-film element can be made into the compact semiconductor thin-film element or semiconductor element of a high density and high fineness having light transparent photodetecting regions or optical modulating regions having >=1,000,000 picture elements.</p> |
