| 摘要 |
<p>PURPOSE:To improve the production yield of a TFT array substrate by short circuiting nearly both ends of gate wiring groups with a metal formed before anodic oxidation. CONSTITUTION:The gate wiring groups are so constituted as to be all the circuit shorted at both ends thereof. A disconnection defect 7 of the gate wirings is assumed to be generated by the defect in photolithography at the time of forming the gate wirings or the defect at the time of etching at the time. The gate wiring groups are, however, short circuited even at the anodic oxidation current supply ends of the gate wiring groups and the anodic oxidation current is therefore supplied from the power feed ends of the gate wirings through the other normal gate wirings even behind the disconnected part. As a result, the anodic oxide films 2 are formed. The gate panel signals are supplied to the wirings after the disconnection of the liquid crystal panel by executing the rescue of the disconnection and, therefore, the normal display is possible.</p> |
