| 摘要 |
<p>PURPOSE:To correct excess erasure by detecting the excess erasure and writing for an excess erasure memory cell with a weaker condition than a normal writing condition. CONSTITUTION:When the memory cell of the memory cell array 1 of an E<2> PROM is erased, the memory cell is read through a sense amplifier 6 and compared with the data of a data latch part 8 by a comparator 7 and the presence of the excess erasure is detected. Then when the existence of the excess erasure is decided, a write control part 10 is controlled by the comparator 7 and the memory cell is written with the weaker condition than the normal condition and the excess erasure is corrected.</p> |
