| 摘要 |
PURPOSE:To provide the method for correcting the defect part of a reticule mask with high accuracy in such a manner that the transmittance in the corrected part does not degrade as the method for correcting the defect of the reticule mask to be used in the process for production of semiconductor devices. CONSTITUTION:A region 3 in contact with a pattern 1 of the residual light shielding film defect 2 formed in contact with the pattern 1 consisting of the light shielding film of the reticule mask is irradiated with a convergent ion beam, by which the residual light shielding film 2 of this region 3 is removed. The remaining island-shaped residual light shielding film defect 4 is then irradiated with a laser and is removed. |
