| 摘要 |
<p>PURPOSE:To suppress the partial increase of the current density at application of voltage and make breakage hard to occur by setting the total of the quantity of the added silicon dioxides and the quantity of excessive titanium oxides within the specified range, and besides, controlling the cavity percentage. CONSTITUTION:In a barium titanate ceramic semiconductor which contains a semiconductor material such as Bi or rare earth element, etc., a silicon dioxide, and excessive titanium oxide, the total of the quantity of added silicon dioxides and the quantity of excessive titanium oxides is set to 2.0-4.0mol%. Furthermore, the porosity is controlled to be 2% or less by setting the average grain diameter of the silicon dioxide to 10mum or less. Hereby, it can be made into fine grain structure, and it can be made hard to cause the partial increase of the current density at voltage application, and made hard to cause the breakage by thermal stress as far as high voltage.</p> |
