发明名称 PIXEL FORMING METHOD FOR END FACE LUMINOUS EL ELMENT
摘要 <p>PURPOSE:To prevent destruction of an EL element by successively piling a lower part electrode layer, lower part dielectric layer, EL luminous layer, upper part dielectric layer and an upper part electrode layer, using a resist mask to engrave corrosion, and piling a protecting film with the mask. CONSTITUTION:A Cr-Au lower part electrode layer 2, SION lower part dielectric layer 3, ZnS:Mn luminous layer 4, SION upper part dielectric layer 5 and a Cr-Au upper part electrode layer 6 are successively formed by sputtering on an insulating substrate 1. A photo sensitive polyimide film is applied to an upper surface a laminated layer 7 to form a resist mask. REI is applied successively from an upper layer to form a pixel 9. O2 added CF4 is used for corrosion engraving the electrode layer dielectric layer, and gas mainly composed of Cl2 is used for corrosion engraving the luminous layer. An SiO2 film 10 and an Si3N4 film 11 are piled with no contact with the atmospheric air. Finally the upper part electrode layer is separated to form a pad 12, and lead terminals 13 are connected to complete an EL element.</p>
申请公布号 JPH05315076(A) 申请公布日期 1993.11.26
申请号 JP19920121573 申请日期 1992.05.14
申请人 TOSHIBA CORP 发明人 UNO SHIGEKI
分类号 B41J2/44;B41J2/45;B41J2/455;G09F9/30;H05B33/00;H05B33/10;H05B33/12;(IPC1-7):H05B33/10 主分类号 B41J2/44
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