发明名称 HIGH-SPEED, HIGH-IMPEDANCE EXTERNAL PHOTOCONDUCTIVE-TYPE SAMPLING PROBE/PULSER
摘要 <p>A photoresponsive pulser/sampler system for investigating electrical signals and responses in VLSI systems employs a microtip (36)which communicates electrically and mechanically with the device under test, and electrically with an electrode (33, 34) via a photoresponsive gate (37, 38). The photoresponsive gate (37, 38) is formed of interdigitated electrodes which have interdigital spacings therebetween on the order of 1 νm. The structure of the invention is operable in the dual modalities of probe and pulser which share a common probe tip (36). Simultaneous implementation of the pulser and sampler functions is achieved with the use of a lock-in amplifier and the technique of difference frequency mixing, where the pulser optical pulse frequency is f1 and the gate optical pulse frequency is f2. Multiple photoresponsive gates (37, 38) coupled to a common probe tip (36) and having respective electrodes (33, 34) are disclosed for achieving respective pulsing and sampling functions, and also for effecting S-parameter measurements. The lock-in amplifier is tuned to the difference between the two frequencies (f2-f1). Piezoelectric apparatus is employed for translating the probe tip (36) over the device under test.</p>
申请公布号 WO1993023757(A1) 申请公布日期 1993.11.25
申请号 US1993004535 申请日期 1993.05.12
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