| 摘要 |
<p>Ion implantation apparatus comprises an ion source (11) producing an ion beam (14) which is analysed by a magnet (15) and directed on a target (17). The ion beam (14) passes through a resolving slit (28), defined between two opposed rotors (20 and 21). The rotors comprise vanes (29) mounted on cooled cores (30 and 31), and the slit (28) is defined by opposed peripheral portions of the vanes. After use, the rotors can be rotated to present different opposed vanes to define the resolving slit. The spacing of the slit can be varied by rotation of the vanes, or variation of the separation of the axes of the rotors.</p> |
