| 摘要 |
<p>A process apparatus whose chamber can be cleaned in a short time not exposed to air at all. At least two electrodes of first and second electrodes (107, 105) are provided in a vacuum vessel (108). A high-frequency power (112) having a first frequency is supplied to the first electrode (107), and a high-frequency power (101) having a second frequency different from the first frequency is supplied to the second electrode (105). A mechanism for supporting a wafer (106) is disposed on the second electrode (105), and a gas introduced into the vacuum vessel (108) is turned into a plasma by the powers. In this apparatus, a mechanism, by which the impedance between the second electrode (107) and a ground can be made enough larger than that between the first electrode and the ground, if necessary, is provided.</p> |
