发明名称 |
WIDE BAND-GAP SEMICONDUCTOR LIGHT EMITTERS |
摘要 |
TYPE-II semiconductor heterojunction light emitting devices formed on a substrate (10) are described wherein a graded injection layer (18) is used to accelerate electrons over the electron barrier formed by the junction. Further, wide band gap semiconductor LEDs and lasers are proposed formed of II-VI materials which emit light in the blue and green wavelengths. Particularly, a system composed of n-CdSe:A1/MgxCd1-xSe/MgyZn1-yTe/p-ZnTe are described where the value of y determines the wavelength of the emitted light in the green or blue region and x varies across the graded injection layer for raising the energy levels of excited electrons. |
申请公布号 |
WO9323882(A1) |
申请公布日期 |
1993.11.25 |
申请号 |
WO1993US03553 |
申请日期 |
1993.04.14 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
MCCALDIN, JAMES, O.;MCGILL, THOMAS, C.;PHILLIPS, MARK, C. |
分类号 |
H01L33/00;H01L33/28;H01S5/042;H01S5/32;H01S5/327;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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