| 摘要 |
Apparatus for producing ions of mass (28) isotope of silicon comprises an ion source (31) for producing an ion beam from an electric discharge in an arc chamber (44). The discharge is maintained by a feed gas of trichlorofluorosilane (SiCl3F) fed along a feed pipe (35). The feed material (11) is contained in liquid form in a feed vessel (12) linked to the feed pipe (35) through a feed pipe (34). The feed pipes (34 and 35) and associated valves (17 and 36) are surrounded by jackets (18 and 46) containing an inert gas at above atmospheric pressure to prevent any inward leaks of air into the feed gas. The purified feed material (11) has previously been provided in the vessel (12) by condensing the feed material at liquid nitrogen temperature, and then pumping out the region above the condensed feed material to remove contaminant gases. |
