摘要 |
<p>A semiconductor memory device includes a silicon chip (1) and sub-arrays (A, B) formed in the chip (1). In each of the sub-arrays (A, B), memory cells arranged in a matrix form, word lines (WLA, WLB) provided for respective rows of each of the sub-arrays, and bit lines (BLA, BLB) provided for respective columns of each of the sub-arrays are arranged. Further, in the chip (1), amplifier groups (14A, 14B) for amplifying data read out from the memory cells are arranged for the respective sub-arrays. Amplifiers (16A, 16B) connected to respective bit lines are provided in the amplifier groups (14A, 14B) and the amplifiers (16A, 16B) each have a function of continuously holding data read out from the memory cell. <IMAGE></p> |
申请人 |
KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION |
发明人 |
TAKASE, SATORU;FURUYAMA, TOHRU;STARK, DONALD C.;KUSHIYAMA, NATSUKI;SAKURAI, KIYOFUMI;NOJI, HIROYUKI;OHSHIMA, SHIGEO |