| 摘要 |
The method for forming a package using a plasma in the mold process of a semiconductor is characterized by (a) filling up an inner of the top and bottom molds connected to the plates with a package material, and (b) generating a plasma between the top and bottom plates connected to the plasma generator to calcine the package material in the vacuum chamber. The appts. for forming the package includes a chamber (10), plates (2,2'), molds (3,4), a lead frame (8), a chip (7) and a cavity (9).
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