| 摘要 |
The contact plug of a semiconductor device is mfd. by (a) forming an electroconductive diffusion region on the fixed part of the semiconductor substrate, (b) forming an insulating film on the surface of the substrate, (c) removing the fixed part of the insulating film, and forming a contact hole, (d) forming a silicon layer and a high m.p. metal ion-implanted layer, heat-treating them, and silicidizing them, (e) forming a silicon layer on the surface of the silicon layer to bury the contact hole, (f) removing the silicon layer and the silicide layer except the hole, (g) forming a high m.p. metal ion-implanted layer on the buried silicon layer, and (h) activating the metal ion, and silicidizing the silicon layer.
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