| 摘要 |
A semiconductor device of the RESURF type with a lateral DMOST (LDMOST), comprising a semiconductor body (1) of substantially a first conductivity type and a surface region (3) of a second conductivity type adjoining the surface (2). The LDMOST comprises a back gate region (5) of the first conductivity type provided in the surface region (3), with a source region (6) of the second conductivity type in the back gate region (5) and a channel region (7) defined between the source region (6) and an edge of the back gate region (5). A drain region (8) of the second conductivity type is at a distance from the back gate region (5). A number of breakdown voltage raising zones (9) of the first conductivity type are provided between the back gate region (5) and the drain region (8). According to the invention, at least one zone of the back gate region (5) forming zone and of the first breakdown voltage raising zone (9A), which is closest to the back gate region (5), is provided with at last one portion (35, 36) projecting towards the other zone, at the area of which portion the distance between this zone and the other zone is smaller than in an adjoining portion of this zone. The exchange of charge between the back gate region (5) and the first breakdown voltage raising zone (9A) can take place through this projecting portion (35, 36), so that the semiconductor device can be switched more quickly. <IMAGE> |
