SEMICONDUCTOR DEVICE.

摘要

A semiconductor source follower circuit having almost zero steady-state consumption power and capable of operating at a high speed and further, accompanied by no reduction in its voltage gain at all. This semiconductor device comprising plural n- channel and p-channel MOS transistors. The sources of a first n-channel MOS transistor and a first p-channel MOS transistor are connected to each other, and the gates of them are connected to each other. The drain electrode potential of the first n-channel MOS transistor is higher than that of the first p-channel MOS transistor.