发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method of fabricating a semiconductor device by (1) forming a semiconductor device having electrodes on the semiconductor substrate, (2) immersing the substrate into a solution which contains a silane group surface active agent so that a monomolecular film is formed an a surface of the substrate, and (3) molding the substrate having the monomolecular film by a synthetic resin. The monomolecular film functions as a protection film for protecting the semiconductor device.
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申请公布号 |
US5264731(A) |
申请公布日期 |
1993.11.23 |
申请号 |
US19920922667 |
申请日期 |
1992.08.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAMURA, HIDEHARU;OGAWA, KAZUFUMI |
分类号 |
B05D1/18;H01L21/312;H01L23/29;(IPC1-7):H01L29/34 |
主分类号 |
B05D1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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