发明名称 Method for fabricating semiconductor device
摘要 A method of fabricating a semiconductor device by (1) forming a semiconductor device having electrodes on the semiconductor substrate, (2) immersing the substrate into a solution which contains a silane group surface active agent so that a monomolecular film is formed an a surface of the substrate, and (3) molding the substrate having the monomolecular film by a synthetic resin. The monomolecular film functions as a protection film for protecting the semiconductor device.
申请公布号 US5264731(A) 申请公布日期 1993.11.23
申请号 US19920922667 申请日期 1992.08.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TAMURA, HIDEHARU;OGAWA, KAZUFUMI
分类号 B05D1/18;H01L21/312;H01L23/29;(IPC1-7):H01L29/34 主分类号 B05D1/18
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