发明名称 Dynamic random access memory
摘要 In a dynamic random access memory of precharge type including a plurality of memory arrays, switches provided for a memory array connect one of the common source lines of a sense amplifier with common data lines is always turned on in a non-selected memory array. The switch is kept turned on even in a period wherein the memory array is selected and the sense amplifier is kept active. When the one of the common source lines is connected by the switches, the potential of the one of the common source lines increases and the potentials of the common data lines also increase without a pull-up circuit. The precharge potentials to be supplied to the common source lines may be different from each other. Further, a load circuit may be provided for each memory array for loading the common data lines for reading information when a switch is turned off to isolate the common data lines. Then, the read and write actions can be stabilized.
申请公布号 US5265058(A) 申请公布日期 1993.11.23
申请号 US19920851293 申请日期 1992.03.12
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMAUCHI, HIROYUKI
分类号 G11C11/409;G11C11/401;G11C11/4091;G11C11/4096;(IPC1-7):G11C13/00;G11C11/40 主分类号 G11C11/409
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