发明名称 |
Circuitry and method for discharging a drain of a cell of a non-volatile semiconductor memory |
摘要 |
Circuitry for discharging a drain of a cell of a non-volatile semiconductor memory is described. A discharge transistor is coupled between (1) the drain of the cell and (2) ground for selectably (a) providing a discharge paths to ground for the drain of the cell when the discharge transistor is enabled and (b) not providing a discharge path to ground for the drain of the cell when the discharge transistor is not enabled. Circuitry is coupled to the discharge transistor for enabling the discharge transistor for a duration that both begins and ends (1) after a first operation is performed with respect to the cell and (2) before a verify operation is performed with respect to the cell.
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申请公布号 |
US5265059(A) |
申请公布日期 |
1993.11.23 |
申请号 |
US19910698547 |
申请日期 |
1991.05.10 |
申请人 |
INTEL CORPORATION |
发明人 |
WELLS, STEVEN E.;JUNGROTH, OWEN W.;FANDRICH, MICKEY L. |
分类号 |
G11C16/24;(IPC1-7):G11C11/40 |
主分类号 |
G11C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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