发明名称 Metal-encapsulated quantum wire for enhanced charge transport
摘要 A polar semiconductor quantum wire for use in electronic and opto-electronic devices. The polar semiconductor quantum wire is either completely or partially encapsulated in metal to reduce the strength of the scattering potential associated with interface optical phonons normally established at the lateral boundaries of polar semiconductor quantum wires. Metal alone or metal employed in conjunction with modulation doping enhances the transport of charge carriers within the polar semiconductor quantum wire.
申请公布号 US5264711(A) 申请公布日期 1993.11.23
申请号 US19920945040 申请日期 1992.09.15
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 DUTTA, MITRA;GRUBIN, HAROLD L.;IAFRATE, GERALD J.;KIM, KI WOOK;STROSCIO, MICHAEL A.
分类号 H01L29/12;H01L33/00;(IPC1-7):H01L29/02 主分类号 H01L29/12
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