发明名称 |
Laser depositon of crystalline boron nitride films |
摘要 |
Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.
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申请公布号 |
US5264296(A) |
申请公布日期 |
1993.11.23 |
申请号 |
US19900523951 |
申请日期 |
1990.05.16 |
申请人 |
GENERAL MOTORS CORPORATION |
发明人 |
DOLL, GARY L.;SELL, JEFFREY A.;PECK, CHARLES A. |
分类号 |
C30B23/02;H01L21/318;(IPC1-7):C23C14/06 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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