发明名称 Laser depositon of crystalline boron nitride films
摘要 Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.
申请公布号 US5264296(A) 申请公布日期 1993.11.23
申请号 US19900523951 申请日期 1990.05.16
申请人 GENERAL MOTORS CORPORATION 发明人 DOLL, GARY L.;SELL, JEFFREY A.;PECK, CHARLES A.
分类号 C30B23/02;H01L21/318;(IPC1-7):C23C14/06 主分类号 C30B23/02
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