| 发明名称 |
Silicon nitride for application as the gate dielectric in MOS devices |
| 摘要 |
A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600 DEG C. to about 700 DEG C. and at times ranging from about 3 seconds to about 30 seconds.
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| 申请公布号 |
US5264724(A) |
申请公布日期 |
1993.11.23 |
| 申请号 |
US19900529477 |
申请日期 |
1990.05.29 |
| 申请人 |
THE UNIVERSITY OF ARKANSAS |
发明人 |
BROWN, WILLIAM D.;KHALIQ, MUHAMMAD A. |
| 分类号 |
H01L21/28;H01L21/3105;H01L29/51;(IPC1-7):H01L23/58;H01L27/01;H01L29/76;H01L29/94 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 地址 |
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