发明名称 Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
摘要 1,188,799. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 11 April, 1967 [14 April, 1966], No. 58370/69. Divided out of 1,188,798. Heading H1K. The subject-matter of this Specification is entirely disclosed in Specification 1,188,798, but the claims are concerned with an insulated gate field effect transistor in which the gate electrode acts as a mask to define the limits of an ion bombardment which produces the source and drain regions.
申请公布号 DE1614233(A1) 申请公布日期 1970.05.27
申请号 DE1967N030308 申请日期 1967.04.11
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 SIEBOLT TE VELDE,TIES;KOELMANS,HEIN
分类号 H01L21/00;H01L21/425;H01L29/00 主分类号 H01L21/00
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