摘要 |
1,188,799. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 11 April, 1967 [14 April, 1966], No. 58370/69. Divided out of 1,188,798. Heading H1K. The subject-matter of this Specification is entirely disclosed in Specification 1,188,798, but the claims are concerned with an insulated gate field effect transistor in which the gate electrode acts as a mask to define the limits of an ion bombardment which produces the source and drain regions. |