MEASURING METHOD OF CONCENTRATION OF INTERSTITIAL OXYGEN IN SINGLE-CRYSTAL SILICON THROUGH OXYGEN PRECIPITATION

摘要

PURPOSE:To obtain a method for correctly measuring the concentration of interstitial oxygen in a precipitated single-crystal silicon at room temperatures by a simple manipulation. CONSTITUTION:In the method for measuring the concentration of interstitial oxygen in a precipitated single-crystal silicon by the infrared absorption method, the concentration is measured from the height of an absorption peak resulting from the bonding between the phonon bonding TA+TO in the silicon lattice appearing at 1720cm<-1> and the bonding of Si2O in the antisymmetric stretching vibration mode, the area, or the value of (half width) X (peak height).