| 摘要 |
<p>PURPOSE:To save the access speed defect of a semiconductor device occurring due to the dispersion of a diffusion parameter in the mass production by a circuit means. CONSTITUTION:An output buffer circuit 109 is provided with two sets of drive circuits and for a normal nondefective one set of them is used to drive an output load. When the access speed of a semiconductor memory is lowered due to the dispersion of the diffusion prorameter in a manufacturing process the storage transistor of a control circuit 110 is turned on and by the output of the storage transistor, the other set as well of two sets of drive circuits is made correspondable to the output of a sense amplifier 108. Thus, the gate width of a transistor consisting of the drive circuit of the output buffer circuit 109 is equal to be enlarged and the access is improved. Then, a product made as a defective usually is saved.</p> |
