| 摘要 |
PURPOSE:To provide an epitaxial wafer having an (AlXGa1-X)YIn1-YP series DH structure of high quality and an LED having high intensity by using a p-type GaP substrate doped with Zn and forming a surface epitaxial layer in an n type. CONSTITUTION:A DH structure of (AlXGa1-X)YIn1-YP (0<=X<=1, 0<=Y<=1) epitaxial layers 6, 5 having different grating constants is provided on a p-type GaP substrate 8, and a structure in which a current is easily diffusible is provided by doping in an n-type at its surface layer side. Thus, diffusion of a current directly under an electrode is facilitated by using the p-type GaP substrate and forming the n type at the surface layer side of the DH structure, and an LED having high intensity can be obtained. |
