| 摘要 |
PURPOSE:To obtain a low cost plastic package type semiconductor device which can sufficiently cope with space reduction and high level of integation and is excellent in long term reliability and heat dissipating properties. CONSTITUTION:An insulating thin film 2 of 1-20mum in thickness is formed on the surface on a rolled metal substrate 1 of copper or copper alloy. As the thin film, a single layer of silicon oxide nitride film or a composite film formed by laminating silicon oxide and silicon oxide nitride silicon (or silicon nitride) is used. A semiconductor element 8 is mounted on the thin film 2 or the exposed surface of a substrate 1. Further the following are suitably formed on the thin film 2; a thin film Vcc wiring 3, a GND wiring 4, a thin film resistor 10, a thin film capacitor 11, etc. After necessary portions are connected by using bonding wires 9, a part containing the inner end portion of an outer lead is sealed with resin. Since the insulating thin film has both the merit of silicon oxide and that of silicon nitride, cracks due to the difference of thermal expansion from the substrate and exfoliation accelerated by moisture absorption are hard to be generated. Hence the high level of integration, light thin short small configuration, and long term reliability can be ensured. |
