| 摘要 |
<p>PURPOSE:To improve blue light emitting intensity of a light emitting diode made of GaN compound semiconductor. CONSTITUTION:A gallium nitride compound semiconductor light emitting element has an N-type layer made of N-type gallium nitride compound semiconductor (AlXGa1-XN; including X=0) and an I-type layer made of I-type gallium nitride s compound semiconductor (AlXGa1-XN; including X=0). The I-type layer 5 is formed from the side connected to the N-type layer 4 with a plurality of repetitive periods, each period having a low impurity concentration IL-type layer having relatively low P-type impurity concentration and a high impurity concentration IH-type layer having relatively high P-type impurity concentration. With this structure, injection efficiencies of electrons and holes are improved. Further, lights are emitted from a junction surface between the layer 4 and the IL-type layer L1, and a junction surface between the IL-type layer and the IH-type layer, thereby improving light emitting intensity.</p> |
