摘要 |
This light emitting diode array formed of a plurality of semiconductor crystals (1), of which both the P and N regions of opposite types of conduction forming a light-emitting junction are respectively and selectively placed in contact with connecting elements, is characterised in that it comprises at least one strip of light-emitting diodes (1) which is essentially composed of a plurality of semiconductor crystals (1a) disposed at a constant interval, one behind the other, between two connecting bars (2, 3) placed in contact respectively with the P and N regions of said semiconductor crystals (1a). …<IMAGE>… |