| 摘要 |
PURPOSE:To elminate the disconnection of electrode and wires owing to stepwise configuration of a diode by forming flat surface thereon. CONSTITUTION:A monocrystal magnesia spinel layer 12 is grown on a p-type silicon semiconductor substrate 11. An opening 12A is perforated at the layer 12 by a selective etching process. The same conducting type monocrystalline silicon as the substrate is homoepitaxially grown in the opening 12A by a vapor phase epitaxial growing process. Subsequently, an n<+>-type silicon semiconductor layer 13 is epitaxially grown in the opening 12A, and the surface of the layer 13 is equalized to the surface of the layer 12. Thereafter, an insulating film, electrodes and wires are suitably formed thereon. |
