| 摘要 |
PURPOSE:To realize the active matrix panel which can convert a unit cell on a driving circuit side to a narrow by optimizing arrangement of a thin film transistor of a shift register. CONSTITUTION:In a source line driving circuit of the active matrix panel, a TFT for constituting clocked inverters 3a, 4a of its unit shift register A1 is formed in thin film transistor forming areas 300a-300d, and as for these thin film transistor forming areas, one each end side of the thin film transistor forming areas in which the thin film transistors of different conductive types are formed is adjacent to each other, and on the other hand, the other end sides thereof are positined in the directions being opposite to each other. Therefore, the thin film transistors are deviated at every conductive type, and also, a forming pitch P2 of a unit shift register is made narrow. |
