发明名称 GATE DRIVE CIRCUIT OF THREE-PHASE INVERTER
摘要 PURPOSE:To prevent FETs constituting a three-phase inverter from being damaged due to improper operation of a gate control circuit when a power supply voltage becomes extremely low and hence a short-circuiting accident. CONSTITUTION:A malfunction prevention circuit 50 with a Zener diode 40 which is connected so that current is shut off when a power supply voltage is lower than a predetermined reference voltage is provided, thus forcing a group of corresponding FETs Q1, Q3, and Q5 or Q2, Q4, and Q6 of each phase out of a plurality of FETs where the malfunction prevention circuit 50 constitutes a three-phase bridge inverter circuit to be off when the power supply voltage is lower than the reference voltage.
申请公布号 JPH05304781(A) 申请公布日期 1993.11.16
申请号 JP19920106249 申请日期 1992.04.24
申请人 SAWAFUJI ELECTRIC CO LTD 发明人 AKAZAWA NAOKI;MOTOJIMA MAKOTO
分类号 H02M7/48;H02M7/537;H02P27/06;H03K17/08 主分类号 H02M7/48
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