QUANTUM DOT CRYSTAL GROWTH DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To realize an ultraflat crystal surface and to enable a crystal growth nucleus to grow uniformly as a quantum dot by a method wherein material gas is supplied at ten times the conventional flow rate. CONSTITUTION:A semiconductor crystal substrate 1 is held by a graphite susceptor 2, a lid 3 of the same crystal with the crystal substrate 1 is made to cover the susceptor 2 confronting the semiconductor crystal substrate 1, and the lid 3 is covered with a graphite presser 4. A material gas introducing guide pipe 7 is inserted into an opening 5 formed of the susceptor 2 and the presser 4. Material gas is fed at a flow rate of 50L/min, whereby a crystal growth speed at a kink becomes 5 times or so as high as crystal nucleus generation speed, and consequently an ultraflat crystal surface can be obtained.