| 摘要 |
An exposure method and apparatus for aligning a pattern of a mask with a pattern of a wafer. And for transferring the pattern of the mask onto a resist layer formed on the surface of the wafer is disclosed, wherein a portion of the resist layer on the wafer in the vicinity of an alignment mark formed on the wafer is exposed to light passed through a portion of the mask including an alignment mark formed on the mask, thereby to form a latent image of the alignment mark of the mask on the resist layer of the wafer, the latent image of the alignment mark of the mask formed on the resist layer of the wafer. The alignment mark formed on the wafer is detected so as to detect any positional deviation between the latent image and the alignment mark formed on the resist layer of the wafer. At least one of the mask and the wafer is displaced on the basis of the result of detection, and finally the resist layer of the wafer is exposed to light passed through a portion of the mask including the pattern.
|
