BASE PLATE FOR EPITAXIAL GROWTH AND METHOD FOR EPITAXIAL GROWTH

摘要

PURPOSE:To enable great reduction in tear-like defects occurring on the surface of an epitaxial layer and improve the smoothness of the growing layer surface. CONSTITUTION:In the growth of an epitaxial layer by vapor-phase growth on the base plate of a semi-conductor single crystal, the base plate used satisfies the inequality: 0.011sq. rt. V<3>+6.21X10<20>/sq. rt. T<15=theta<=0.20 wherein the growth rate = V, growth temperature = T; the inclination angle from the direction of the effective utilization area of the surface <100>=theta, and 0.1<=V<=10(mum/Hr) and 853<=T<=1023(K).