| 摘要 |
PURPOSE:To fabricate a semiconductor device having enhanced performance and reliability with high yield. CONSTITUTION:Fabrication of semiconductor device comprises step (A) for depositing a thin film of In 6 at a part of an Au plated copper heat sink 5 where a laser element 1 is mounted, step (B) for quickly heating the heat sink 5 upto 400-500 deg.C in N2 atmosphere and evaporating oxide formed on the surface of In 6 and then quickly cooling the heat sink 5 so that the In 6 does not permeat into the Au plating layer, step (C) for mounting the laser element 1 on the In 6 when the heat sink 5 is cooled down to about 300 deg.C and further cooling the heat sink 5 while pressing the laser element 1 against the heat sink 5 thus solidifying the In 6, and step (D) for securing the laser element 1 to the heat sink 5 without interposing any oxide therebetween. |
