| 摘要 |
PURPOSE:To provide a dynamic memory allowing high integration. CONSTITUTION:An insulating layer 11 consisting of polyimide is formed on a silicon substrate 1, thereon an element formation layer having a semiconductor as a main material is formed, a MOS transistor is arranged on the surface of the element formation layer, directly thereunder an N-type diffusion layer 15, an insulating layer 18 and the MOS capacity composed of a plate electrode 19 are arranged respectively and these constitute a memory cell. When a MOS transistor turns ON, electrons are stored from a bit wire 3 to the N-type diffusion layer 15 on the drain side. Accordingly, an area part required for the MOS transistor is used for a capacitor so that a cell area is not required to be shared by the MOS transistor and the capacitor, and a bottom area to be used for the capacitor can be increased as against the same cell area. |
