发明名称 |
Mask for lithography |
摘要 |
A mask structure according to an aspect of the invention includes a base having a first zone for an alignment pattern and a second zone for a circuit pattern; an alignment pattern forming material with which the alignment pattern is formed in the first zone; and a circuit pattern forming material with which the circuit pattern is formed in the second zone; wherein the alignment pattern forming material and the circuit pattern forming material are different from each other.
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申请公布号 |
US5262257(A) |
申请公布日期 |
1993.11.16 |
申请号 |
US19930003867 |
申请日期 |
1993.01.11 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
FUKUDA, YASUAKI;NOSE, NORIYUKI |
分类号 |
G03F1/14;G03F9/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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