发明名称 |
Method for forming an interconnection structure for conductive layers |
摘要 |
An interconnect structure is formed having a substrate (10). A conductive layer (14) is formed overlying the substrate (10). A conductive layer (18) is formed overlying the conductive layer (14). An opening (19) is etched through the conductive layer (18), exposing a top portion of conductive layer (14), and forming a sidewall of the conductive layer (18). An selective isotropic etch procedure is used to laterally recess the sidewall of the conductive layer (18). A sidewall spacer (22) is formed adjacent the sidewall of the conductive layer (18). A conductive layer (24) is formed within opening (19) and adjacent the spacer (22) to form an interconnection between conductive layers (24 and 14). The interconnection is self-aligned, and conductive layer (18) is reliably isolated from the interconnect due to the lateral recessed sidewall of the conductive layer (18).
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申请公布号 |
US5262352(A) |
申请公布日期 |
1993.11.16 |
申请号 |
US19920937025 |
申请日期 |
1992.08.31 |
申请人 |
MOTOROLA, INC. |
发明人 |
WOO, MICHAEL P.;HAYDEN, JAMES D.;SIVAN, RICHARD D.;KIRSCH, HOWARD C.;NGUYEN, BICH-YEN |
分类号 |
H01L21/60;H01L21/768;H01L23/485;(IPC1-7):H01L21/44;H01L21/48 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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