| 摘要 |
PURPOSE:To improve filling characteristics of a contact hole by depositing a conductive film, as a first layer wiring material for conducting upper and lower conductive films, on a contact hole made through an insulation film deposited on a substrate part and employing tungsten, deposited by CVD method, in at least one layer. CONSTITUTION:Tungsten films 8, 10, 12 are employed only in a first layer wiring. The tungsten films 8, 10, 12 are deposited by CVD (chemical vapor deposition) method. The first layer wiring is a local wiring such as a wiring in a cell which connects between a semiconductor region and a channel or a shunt. Consequently, a low CR time constant can be kept and delay of signal can be prevented without increasing the resistance of the wiring of a bipolar semiconductor device or the entire bi-CMOS semiconductor device even if tungsten as a wiring material has high resistance. This constitution enhances filling characteristics, i.e., tight contact, of a contact hole. |
