| 摘要 |
PURPOSE:To form non-alloy ohmic electrodes to an N-type GaAs layer and a P-type GaAs layer, which are grown easily and have low contact resistance. CONSTITUTION:A superlattice layer 3, in which N-type GaAs and N-type InAs are laminated alternately, is formed onto a GaAs substrate 1 and an electrode metal 5 is shaped onto the superlattice layer 3 at the time of an ohmic electrode to an N-type GaAs layer. The superlattice layer 3 is formed in structure, in which a period is changed so that N-type InAs is increased gradually toward a surface in the means composition of the superlattice layer 3. The superlattice layer, in which N-type GaAs and N-type InAs in an ohmic electrode are laminated alternately, is formed in structure, in which the superlattice layer is replaced with a superlattice layer, in which P-type GaAs and P-type InAs are laminated alternately, or a superlattice layer, in which P-type GaAs and P-type GaSb are laminated laternately, at the time of the ohmic electrode to a P-type GaAs layer. |
