| 摘要 |
PURPOSE:To provide a large capacity capacitor and a semiconductor element having the capacitor without increasing a depth and a hole diameter of an STT memory cell. CONSTITUTION:The capacitor structures to be composed of an electrode 3a, a capacitive insulating film 4a and an electrode 3b are a plurality of times laminated so as to form a lamination structure of the capacitor. Then, one conductive film forms electrodes of two capacitors by utilizing the inside and the outside composing one side electrode of two neighboring capacitors. In this way, a plurality of capacitors holding one side electrode in common formed by lamination of capacitor structures are in parallel connected to one MOS transistor. Accordingly, low consumption electrification is made possible by extending a refleshing cycle. Further, an alfa-ray resisting characteristic is improved. Moreover, a noise-proof characteristic is improved because a signal amount increases. |
