| 摘要 |
PURPOSE:To suppress a difference in level between a memory cell part and a peripheral circuit part so as to increase a storage capacity per unit area in a semiconductor device having a capacitor on a part of a memory cell. CONSTITUTION:This semiconductor device is composed of a storage electrode 19, in which a capacitor is formed inside an opening part formed on the insulating films 14, 15 on an impurity diffusion layer (source-drain region) 13 composing a transistor while being shaped in the shape of the eaves so as not to contact with the inside wall surface of said opening part, a dielectric film 20 covering the top, the side, the underside of the eaves of this storage electrode 19 and a counter electrode 21 covering the storage electrode 19 and the dielectric film 20 while a part is buried inside the opening part. |
