发明名称 Method of making a semiconductor memory device having error checking/correcting functions
摘要 A semiconductor memory device having error checking/correcting functions includes a circuit (10) for generating a code for error checking/correcting based on information externally supplied and linking the information and the code to be transmitted to a memory cell array (1), and another circuit (11) for error checking and correcting read-out information from the information and the code which are read-out from the memory cell array so as to output correct read-out information. The code word generating circuit (10) and the error checking/correcting circuit (11) are formed of a masked ROM integrated on the same semiconductor chip (100) as that of the memory cell array (1) in the memory device.
申请公布号 US5262342(A) 申请公布日期 1993.11.16
申请号 US19910771891 申请日期 1991.10.07
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TOYAMA, TSUYOSHI;KOBAYASHI, SHINICHI;NOGUCHI, KENJI
分类号 G06F11/10;(IPC1-7):H01L21/70 主分类号 G06F11/10
代理机构 代理人
主权项
地址