| 发明名称 |
Photosensitive reactive ion etch barrier |
| 摘要 |
Reaction products of organosilane compounds and a novolac resin having phenolic groups have been found to have a very low rate of etching, thereby enabling the material to also be used as an RIE barrier in semiconductor manufacturing processes. A particular photosensitive material has the following chemical formula: <IMAGE>
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| 申请公布号 |
US5262273(A) |
申请公布日期 |
1993.11.16 |
| 申请号 |
US19920846300 |
申请日期 |
1992.02.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AGOSTINO, PETER A.;PRESSMAN, FREDERICK M. |
| 分类号 |
G03F7/075;(IPC1-7):G03C1/492 |
主分类号 |
G03F7/075 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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