| 摘要 |
<p>PURPOSE:To enhance the accuracy of alignment by forming a pattern to a slightly larger size, forming a pattern of a desired size consisting of a second film and removing the projecting parts of the first film with this pattern as a mask. CONSTITUTION:The Cr/CrOx pattern 101 is formed slightly larger by as much as the size corresponding to the alignment accuracy at the time of forming the pattern by executing wet etching the resist pattern as a mask and forming the pattern by later second plotting with respect to the desired size. An Si film 102 is then deposited by evaporation over the entire surface of the substrate and after a resist for electron beams is formed on this substrate, a conductive film is formed and the second plotting is executed by the electron beams. Development is then executed to form the resist pattern 105 and the Si film in the apertures of the resist is removed by active ion etching (RIE) with the resist pattern 105 as a mask. Further, the CrOx/Cr film 107 in the apertures of the resist and the resist are removed by the RIE, by which the patterns 108, 102 are formed.</p> |
