| 摘要 |
PURPOSE:To attain the non-volatilization of data by mounting a non-volatile memory chip, to which writing and erasure are enabled, and a RAM on the same package and constituting one semiconductor storage device. CONSTITUTION:A chip control signal CC is changed over from a high level to a low level, a Flash is brought to a standby state and stored data are read from the head address of a DRAM. A CPU changes over the chip control signal CC to the high level, inputs a command 10H to the Flash through a data bus DB, and indicates write operation while inputting read data from the DRAM as write data. The operation is conducted to all stored data of the DRAM, thus transferring the stored data of the DRAM to the Flash. When a power supply is interrupted, data stored in the DRAM are broken, but the same data can be stored in the Flash. |
