| 摘要 |
PURPOSE:To contrive the improvement of the heat dissipation property of a hermetically sealed semiconductor device without generating a reduction in the reliability of the device due to a thermal stress, which is generated by a difference between the respective thermal expansion coefficients of a semiconductor element, enclosures and a sealing part. CONSTITUTION:A heat transfer grease 22 is provided on a first metallic enclosure 21 and a semiconductor element 23 is placed on this grease 22. Electrodes, which are not shown in the diagram, on this element 23 are electrically connected with inner leads 25 by bonding wires 24, an insulating film 26 consisting of a polyimide or the like is adhered on this element 23 and a second metallic enclosure 27 is provided on this film 26. The element 23 is supported by holding the element 23 between this enclosure 27 and the enclosure 21. Accordingly, the heat dissipation property of a hermetically sealed semiconductor device is improved and a reduction in the reliability of the device due to a thermal stress, which is generated by a difference between the respective thermal expansion coefficients of the element 23, the enclosures and a sealing part, can be prevented from being generated. |
