发明名称 SEMICONDUCTOR OUTPUT CIRCUIT
摘要 <p>PURPOSE:To reduce the time change ratio of an output waveform, to suppress a switching noise, and to improve a reliability by serially connecting a resistor with the drain of an MOS transistor. CONSTITUTION:The second stage CMOS invertor circuit and BiMOS invertor circuit are connected in parallel with the first stage CMOS invertor circuit, and the first stage CMOS invertor circuit is constituted by serially connecting the drain of a (p) channel MOS field effect transistor 1 with the drain of an (n) channel MOS field effect transistor 2. And also, the second stage CMOS invertor circuit is constituted by serially connecting the drain of a (p) channel MOS transistor 3 with the drain of an (n) channel MOS transistor 4. Then, the second stage BiM0S invertor being the output stage is constituted by serially connecting the drain of a (p) channel MOS transistor 5 with the drain of an (n) channel MOS transistor 6 with a resistor 15 interposed between those MOS transistors.</p>
申请公布号 JPH05299994(A) 申请公布日期 1993.11.12
申请号 JP19920104250 申请日期 1992.04.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 HAYAKAWA YASUSHI;ISHII SUSUMU
分类号 G06F15/78;H03K17/16;H03K17/56;H03K17/567;(IPC1-7):H03K17/56 主分类号 G06F15/78
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